MPSA42

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 12 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 100 mA) High voltage (max. 300 V). APPLICATIONS Video Telephony Professional communication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92. Fig.1 1 handbook, halfpage 2 3 MPSA42; MPSA43 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 1 2 3 MAM279 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO MPSA42 MPSA43 VCEO collector-emitter voltage MPSA42 MPSA43 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 300 200 6 100 200 100 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 300 200 V V MIN. MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER colle...