MPSA42

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA42/D High Voltage Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA42 * MPSA43 *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA42 300 300 6.0 500 625 5.0 1.5 12 – 55 to +150 MPSA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/mW °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA42 MPSA43 IEBO MPSA42 MPSA43 — — 0.1 0.1 V(BR)CEO MPSA42 MPSA43 V(BR)CBO MPSA42 MPSA43 V(BR)EBO ICBO — — 0.1 0.1 µAdc 300 200 6.0 — — — Vdc µAdc 300 200 — — Vdc Vdc v 300 ms, Duty Cycle ...