PH4840S

PH4840S N-channel TrenchMOS™ intermediate level FET M3D748 Rev. 01 — 04 March 2004 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Low threshold voltage s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched-mode power supplies s Notebook computers. 1.4 Quick reference data s VDS ≤ 40 V s Ptot ≤ 62.5 W s ID ≤ 94.5 A s RDSon ≤ 4.1 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) mb d Simplified outline Symbol gate (g) mounting base; connected to drain (d) 1 2 3 4 MBL286 g s MBB076 Top view SOT669 (LFPAK) Philips Semiconductors PH4840S N-channel TrenchMOS™ intermediate level FET 3. Ordering information Table 2: Ordering information Package Name PH4840S LFPAK Description Plastic single-ended surface mounted package; 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤...