SPD01N60C3

Rev. 2.0 SPU01N60C3 SPD01N60C3 VDS @ Tjmax RDS(on) ID P-TO252 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance 650 6 0.8 V Ω A P-TO251-3-1 Type SPU01N60C3 SPD01N60C3 Package P-TO251-3-1 P-TO252 Ordering Code Q67040-S4193 Q67040-S4188 Marking 01N60C3 01N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Symbol ID Value 0.8 0.5 Unit A I D puls EAS 1.6 20 0.01 0.8 ±20 ±30 11 -55... +150 W °C A V mJ VGS Ptot T j , T stg Operating and storage temperature Page 1 2004-03-01 Rev. 2.0 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 0.8 A, Tj = 125 °C SPU01N60C3 SPD01N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol C...