SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KN2907S KN2907AS
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60 V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC -600 mA
Collector Power Dissipation (Ta=25 )
PC PC *
150 mW
350
Junction Temperature Tj 150
Storage Temperature Range
Tstg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
KN2907S/AS
EPITAXIAL PLANAR
PNP TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking
Type Name
ZDA
Lot No.
ZHAType Name
Lot No.
MARK SPEC TYPE
KN2907S KN2907AS
MARK ZDA ZHA
2002. 6. 25
Revision No : 3
1/3
KN2907S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICEX
Collector Cut-off Current
KN2907S KN2907AS
ICBO
Collector-Base Breakdown Voltage
V(BR)CBO
Collector-Emitter * Breakdown Voltage
KN2907S KN2907AS
V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
KN2907S KN2907AS
hFE(1)
KN2907S KN2907AS
hFE(2)
DC...