As200-313:PHEMT GAAS. As200-313 Datasheet

As200-313 GAAS. Datasheet pdf. Equivalent

Part As200-313
Description As200-313:PHEMT GAAS
Feature PHEMT GaAs IC 2 W High Linearity 5–6 GHz T/R Switch AS200-313 Applications ■ T/R Switch in WLAN 802..
Manufacture Skyworks
Datasheet
Download As200-313 Datasheet



As200-313
PHEMT GaAs IC 2 W High Linearity
5–6 GHz T/R Switch
AS200-313
Applications
T/R Switch in WLAN 802.11a Systems
Features
Operating Frequency 5–6 GHz
High Linearity 50 dBm IIP3
High Power P-1 dB > 33 dBm
Low Positive Control Voltage 3 V
Low Cost Ultra Small QFN Package
Description
The AS200-313 is a 5–6 GHz PHEMT GaAs switch.
Designed for transmit-receive applications, this device is
capable of switching 2 W microwave signals with 3 V
control while maintaining high linearity performance. The
switch covers the entire 802.11a frequency ranges of
5.15–5.825 GHz. The low loss, high isolation, high linearity
and low cost features make it ideal for wireless LAN
systems in the 802.11a frequency band.
QFN-6
0.078 (2.00 mm)
0.039
PIN 1
BSC
(1.00 mm) MAX.
INDICATOR
0.001
0.29 x 0.35 1
2
6
0.118
5 (3.00 mm)
BSC 12˚ MAX.
(0.025 mm)
± 0.001
(0.025 mm)
34
TOP VIEW
1.02
6
5
0.95 BSC
4
SIDE VIEW
0.35 ± 0.08 mm
1
0.64 BSC
3
0.05 ± 0.05
BOTTOM VIEW
Electrical Specifications at 25°C (0, +3 V)
Insertion Loss2
Parameter1
Isolation
Return Loss3
Frequency
5.0–6.0 GHz
5.0–5.4 GHz
5.5–6.0 GHz
5.0–6.0 GHz
5.0–5.4 GHz
5.5–6.0 GHz
5.0–5.4 GHz
5.5–6.0 GHz
Min.
26
26
26
10
10
Typ.
1.3
1.3
1.3
30
30
30
15
15
Max.
1.5
1.5
1.5
Unit
dB
dB
dB
dB
dB
dB
dB
dB
Operating Characteristics at 25°C (0, +3 V)
Parameter
Switching Characteristics4
Condition
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
Frequency
Min.
Typ.
20
50
50
Max.
Unit
ns
ns
mV
Input Power for -0.1 dB Compression 0/+3 V
5.2 GHz
+33 dBm
Harmonics H2, H3
PIN = 30 dBm
5.2 GHz
+65 dBc
Control Voltages
VLow = 0 to 0.2 V @ 20 µA Max.
VHigh = +2.5 V @ 100 µA Max. to +5 V @ 200 µA Max.
1. All measurements made in a 50 system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. Insertion loss state.
4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Skyworks Solutions, Inc. [781] 376-3000 Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
Specifications subject to change without notice. 12/02A
1



As200-313
PHEMT GaAs IC 2 W High Linearity 5–6 GHz T/R Switch
AS200-313
Typical Performance Data (0, +3 V)
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Frequency (GHz)
Insertion Loss vs. Frequency
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19
-20
5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Frequency (GHz)
Return Loss vs. Frequency
Truth Table
V1
0
VHigh
VHigh = +2.5 to +5 V.
V2
VHigh
0
J1–J2
Isolation
Insertion Loss
J1–J3
Insertion Loss
Isolation
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Frequency (GHz)
Isolation vs. Frequency
Pin Out (Top View)
J2 CBL
1
GND 2
J3 CBL
3
6 V1
5 CBL J1
4 V2
DC blocking capacitors (CBL) must be supplied externally.
CBL = 15 pF.
Absolute Maximum Ratings
Characteristic
RF Input Power
Control Voltage
Operating Temperature
Storage Temperature
ΘJC
Value
6 W Max. > 900 MHz
0/+7 V Control
-0.2 V, +7 V
-40°C to +85°C
-65°C to +150°C
25°C/W
2 Skyworks Solutions, Inc. [781] 376-3000 Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
Specifications subject to change without notice. 12/02A







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)