MOS Driver. DS0026 Datasheet

DS0026 Driver. Datasheet pdf. Equivalent

Part DS0026
Description Dual High-Speed MOS Driver
Feature DS0026 Dual High-Speed MOS Driver February 2000 DS0026 Dual High-Speed MOS Driver General Descript.
Manufacture National
Datasheet
Download DS0026 Datasheet




DS0026
February 2000
DS0026
Dual High-Speed MOS Driver
General Description
DS0026 is a low cost monolithic high speed two phase MOS
clock driver and interface circuit. Unique circuit design pro-
vides both very high speed operation and the ability to drive
large capacitive loads. The device accepts standard TTL out-
puts and converts them to MOS logic levels. The device may
be driven from standard 54/74 series and 54S/74S series
gates and flip-flops or from drivers such as the DS8830 or
DM7440. The DS0026 is intended for applications in which
the output pulse width is logically controlled; i.e., the output
pulse width is equal to the input pulse width.
The DS0026 is designed to fulfill a wide variety of MOS inter-
face requirements. Information on the correct usage of the
DS0026 in these as well as other systems is included in the
application note AN-76.
Features
n Fast rise and fall times — 20 ns 1000 pF load
n High output swing — 20V
n High output current drive — ±1.5 amps
n TTL compatible inputs
n High rep rate — 5 to 10 MHz depending on power
dissipation
n Low power consumption in MOS “0” state — 2 mW
n Drives to 0.4V of GND for RAM address drive
Connection Diagrams (Top Views)
Dual-In-Line Package
DS005853-2
Order Number DS0026CN
See NS Package Number N08E
© 2000 National Semiconductor Corporation DS005853
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DS0026
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V+ − VDifferential Voltage
Input Current
Input Voltage (VIN − V)
Peak Output Current
22V
100 mA
5.5V
1.5A
Maximum Power Dissipation* at TA =
25˚C
420mW
Operating Temperature Range
0˚C to +70˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
300˚C
Note: *Derate N08E package 9.3 mW/˚C for TA above 25˚C.θJA = 107˚C/W
Electrical Characteristics (Notes 2, 3, 4)
Symbol
VIH
IIH
VIL
IIL
VOL
VOH
Parameter
Logic “1” Input Voltage
Logic “1” Input Current
Logic “0” Input Voltage
Logic “0” Input Current
Logic “1” Output Voltage
Logic “0” Output Voltage
ICC(ON)
ICC(OFF)
“ON” Supply Current
(one side on)
“OFF” Supply Current
Conditions
V= 0V
VIN − V= 2.4V
V= 0V
VIN − V= 0V
VIN − V= 2.4V, IOL = 1 mA
VIN − V= 0.4V, VSS V+ + 1.0V
IOH = − 1 mA
V+ − V= 20V, VIN − V= 2.4V
V+ − V= 20V,
VIN − V= 0V
Min
2
V+ − 1.0
Typ
1.5
10
0.6
−3
V+0.7
V+−0.8
Max
15
0.4
−10
V+1.0
Units
V
mA
V
µA
V
V
30 40 mA
10 100 µA
Switching Characteristics
(TA = 25˚C) (Notes 5, 6)
Symbol
Parameter
Conditions
Min Typ Max Units
tON
Turn-On Delay
(Figure 1)
(Figure 2)
5 7.5 12
11
ns
ns
tOFF
Turn-Off Delay
(Figure 1)
(Figure 2)
12 15
13
ns
ns
tr
Rise Time
(Figure 1),
CL = 500 pF
(Note 5)
CL = 1000 pF
(Figure 2),
CL = 500 pF
(Note 5)
CL = 1000 pF
tf Fall Time
(Figure 1),
CL = 500 pF
(Note 5)
CL = 1000 pF
(Figure 2),
CL = 500 pF
(Note 5)
CL = 1000 pF
15 18
20 35
30 40
36 50
12 16
17 25
28 35
31 40
ns
ns
ns
ns
ns
ns
ns
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they
are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics provides conditions for actual device operation.
Note 2: These specifications apply for V+ − V= 10V to 20V, CL = 1000 pF, over the temperature range of 0˚C to +70˚C for the DS0026CN.
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: All typical values for TA = 25˚C.
Note 5: Rise and fall time are given for MOS logic levels; i.e., rise time is transition from logic “0” to logic “1” which is voltage fall.
Note 6: The high current transient (as high as 1.5A) through the resistance of the internal interconnecting Vlead during the output transition from the high state to
the low state can appear as negative feedback to the input. If the external interconnecting lead from the driving circuit to Vis electrically long, or has significant dc
resistance, it can subtract from the switching response.
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