CD3001

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta =25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage CEO VEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak (1) PC Collector Power Dissipation T , Operating and Storage Junction j Tstg Temperature Range (1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10% VALUE 500 400 9.0 0.5 1.5 900 - 55 to +150 UNIT V V V A mW ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Fall Time Storage Time hFE* Classifications Note: Product is pre selected in DC current gain (Groups A to F). CDIL reserves the right to ship any of the groups according to production availability. MARKING SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO hFE* hFE VCE(sat) VBE(sat) fT tf ts A 10-15 TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=500V, IE = 0 VCE=400V, IB = 0 VEB=9V, IC=0 VCE=20V, IC=20mA VCE=10V, IC=0.25mA IC=50mA, IB=10mA IC=50mA, IB=10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V B 15-20 C 20-25 MIN 500 400 9 TYP MAX UNIT V V V µA µA 100 200 100 10 5 40 0.5 1.2 8 0.3 1.5 V V MH...