Encapsulate Transistors. 3CD3001 Datasheet

3CD3001 Transistors. Datasheet pdf. Equivalent

Part 3CD3001
Description TO-251 Plastic Encapsulate Transistors
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 .
Manufacture Jiangsu Changjiang
Datasheet
Download 3CD3001 Datasheet




3CD3001
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.2 W (Tamb=25)
Collector current
ICM: 0.2
Collector-base voltage
A
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-251
1. BASE
2. COLLECTOR
3EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC= 1 mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 µA, IC=0
7
Collector cut-off current
ICBO VCB= 600 V , IE=0
100
Collector cut-off current
Emitter cut-off current
ICEO VCE= 400 V , IB=0
IEBO VEB= 7 V , IC=0
200
100
DC current gain
hFE(1)
hFE(2)
VCE= 20 V, IC= 20mA
VCE= 10V, IC= 0.25 mA
10
5
40
Collector-emitter saturation voltage
VCE(sat) IC= 50mA, IB= 10 mA
0.5
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE(sat)
VBE
fT
tf
tS
IC= 50 mA, IB= 10mA
IE= 100 mA,
VCE= 20 V, IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
8
1.2
1.1
0.3
1.5
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs



3CD3001
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40







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