N-Channel MOSFET
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW9NC80Z
n n n n n n
STW9NC80Z
VDSS 80...
Description
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW9NC80Z
n n n n n n
STW9NC80Z
VDSS 800 V
RDS(on) <0.9Ω
ID 9.4 A
TYPICAL RDS(on) = 0.82Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value 800 800 ±25 9.4 5.9 38 190 1.52 ±50 4 3 -–65 to 150 150
(1)ISD ≤ 9.4A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX
Unit V V V A A A W W/°C mA KV V/ns V °C °C
()Pulse width limited by safe operati...
Similar Datasheet