MC33169

Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a priority management system of drain switching, ensuring that the negative voltage is always present before turning “on” the Power Amplifier. Additional features include an idle mode input and a direct drive of the N–Channel drain switch transistor. This product is available in a 4.0 V version intended for control of the RF Power Amplifier in GSM, DCS1800 and PCS applications. GaAs POWER AMPLIFIER SUPPORT IC SEMICONDUCTOR TECHNICAL DATA Negative Regulated Output for Full Depletion of GaAs MESFETs Drain Switch Priority Management Circuit CMOS Compatible Inputs Idle Mode Input (Standby Mode) for Very Low Current Consumption Output Signal Directly Drives N–Channel FET Low Startup and Operating Current 1 14 DTB SUFFIX PLASTIC PACKAGE CASE 948G (TSSOP–14) PIN CONNECTIONS Simplified Block Diagram + VBB Double 12 + – – C1 VBB 11 3 Triple + C4 – Tx Power Control 9 Input 13 Idle Mode Input 6 Gnd 2 C3 + + C2 1 VCC 14 8 C2 Input 1 C1/C2 VBattery (2.7 to 7.0 V) C1 Input 2 3 14 VCC 13 Idle Mode Input 12 VBB Double 11 VBB Triple 10 Sense Input 9 8 (Top View) Tx Power Control Input Gate Drive Output VBB Generator (Voltage Tripler) MMSF4N01HD MC33169 Gate Drive Output VO Output 4 VO Charge...