(PDF) IRG4BC30W-S Datasheet PDF | International Rectifier





IRG4BC30W-S Datasheet PDF

Part Number IRG4BC30W-S
Description INSULATED GATE BIPOLAR TRANSISTOR
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download IRG4BC30W-S Datasheet PDF

Features: Datasheet pdf PD - 91790 IRG4BC30W-S INSULATED GATE B IPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) appl ications • Industry-benchmark switchi ng losses improve efficiency of all pow er supply topologies • 50% reduction of Eoff parameter • Low IGBT conducti on losses • Latest-generation IGBT de sign and construction offers tighter pa rameters distribution, exceptional reli ability C VCES = 600V G E VCE(on) typ . = 2.10V @VGE = 15V, IC = 12A n-chann el Benefits • Lower switching losses allow more cost-effective operation th an power MOSFETs up to 150 kHz ("hard s witched" mode) • Of particular benefi t to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority- carrier recombination make these an exc ellent option for resonant mode switchi ng as well (up to >>300 kHz) D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C.

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IRG4BC30W-S datasheet
PD - 91790
IRG4BC30W-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.10V
@VGE = 15V, IC = 12A
D 2Pak
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
–––
–––
Max.
1.2
40
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
www.irf.com
Units
°C/W
1
8/13/98

IRG4BC30W-S datasheet
IRG4BC30W-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
11
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.34 — V/°C VGE = 0V, IC = 1.0mA
2.1 2.7
IC = 12A
VGE = 15V
2.45 — V
IC = 23A
See Fig.2, 5
1.95 —
IC = 12A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-11 — mV/°C VCE = VGE, IC = 250µA
16 — S VCE = 100 V, IC = 12A
— 250 µ A VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 76
— 7.6 11
— 18 27
— 25 —
IC = 12A
nC VCC = 400V
VGE = 15V
See Fig.8
— 16 — ns TJ = 25°C
— 99 150
IC = 12A, VCC = 480V
— 67 100
VGE = 15V, RG = 23
— 0.13 —
Energy losses include "tail"
— 0.13 — mJ See Fig. 9, 10, 13, 14
— 0.26 0.35
— 24 —
— 17 —
— 150 —
— 150 —
TJ = 150°C,
ns IC = 12A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
— 0.55 — mJ See Fig. 11,13, 14
— 7.5 — nH Measured 5mm from package
— 980 —
— 71 —
— 18 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
www.irf.com





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