HL6714G

HL6714G AlGaInP Laser Diode ODE-208-192C (Z) Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability. Features Visible light output at wavelengths up to 680 nm Single longitudinal mode Low astigmatism: 10 µm Typ High output power: 10 mW (CW) Built-in monitor photodiode Package Type HL6714G: G2 Internal Circuit 1 3 PD LD 2 HL6714G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Tstg Rated Value 10 12 * 2 30 –10 to +50 –40 to +85 Unit mW mW V V °C °C Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50% Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Threshold current LD operating voltage Slope efficiency Beam divergence parallel to the junction Beam divergence parpendicular to the junction Astigmatism Lasing wavelength Monitor current Symbol PO Ith VOP ηs θ// θ⊥ AS λp IS Min 10 20 — 0.3 5 18 — 660 0.3 Typ — 35 — 0.5 8 22 10 670 0.8 Max — 60 2.7 0.8 11 30 — 680 1.5 Unit mW mA V mW/mA deg. deg. µm nm mA Test Conditions — — PO = 10 mW 6 (mW) / (I(8mW) – I(2mW)) PO = 10 mW, FWHM PO = 10 mW, FWHM PO = 10 mW, NA = 0.55 PO = 10 mW P...