AlGaInP Laser Diode
HL6323MG
AlGaInP Laser Diode
ADE-208-1410 (Z) 1st Edition Mar. 2001 Description
The HL6323MG is a 0.63 µm band AlGaInP ...
Description
HL6323MG
AlGaInP Laser Diode
ADE-208-1410 (Z) 1st Edition Mar. 2001 Description
The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
Application
Laser markers Measurement equipment
Features
High output power Visible light output Small package TM mode oscillation : 35 mW (CW) : λp = 639 nm Typ : φ5.6 mm
Pakage Type HL6323MG: MG
Internal Circuit
1 3
PD
LD
2
HL6323MG
Absolute Maximum Ratings (TC = 25°C ± 3°C)
Item Optical output power Optical output power (Puise) LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO VR(LD) VR(PD) Topr Tstg Value 35 * 50 * 2 30 −10 to +50 −40 to +85
1 2
Unit mW mW V V °C °C
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime. 2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics (TC = 25°C ± 3°C)
Item Optical output power Optical output power (Puise) Threshold current Slope efficiency Operating current Operating voltage Beam divergence parallel to the junction Beam divergence parpendicular to the junction Lasing wavelength Monitor current Symbol PO PO Ith ηs I OP VOP θ // θ⊥ λp IS Min 35 50 30 0.4 7 26 635 0.05 Typ 45 0.6 95 2....
Similar Datasheet