RLT6505G

ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner.mcb.at RLT6505G TECHNICAL DATA Visible Wavelength Laserdiode Structure: AlGaInP, index guided, single transverse mode Lasing wavelength: 650 nm Max. optical power: 5 mW Package: 9 mm G or 5.6mm MG PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC Optical Output Power LD Reverse Voltage PD Reverse Voltage Operation Case Temperature Storage Temperature SYMBOL Po VR(LD) VR(PD) TC TSTG RATING 5 2 30 -10 .. +40 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po kink free Threshold Current Ith Operation Current Iop Po =5mW Operating Voltage Vop Po =5mW Lasing Wavelength lp Po =5mW Beam Divergence q1 Po =5mW Beam Divergence q2 Po =5mW Astigmatism As Po =5mW, NA=0.4 Monitor Current Im Po =5mW, V r=5V MIN 20 TYP 30 45 2.2 650 8 31 11 10 5 25 MAX 5 40 70 2.7 655 11 37 UNIT mW mA mA V nm ° ° µm µA ...