KMM366S1623DTL

KMM366S1623DTL Revision History Revision 0.0(July 7, 1999) PC66 Unbuffered DIMM Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. Skip ICC4 value of CL=2 in DC characteristics in datasheet. Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. Symbol Change Notice IIL IIL IOL Before Input leakage current (inputs) Input leakage current (I/O pins) Output open @ DC characteristic table ILI Io After Input leakage current Output open @ DC characteristic table Test Condition in DC CHARACTERISTIC Change Notice Symbol ICC2P , ICC3P ICC2N , ICC3N ICC4 Before CKE ≤ VIL(max), tCC = 15ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE ≤ VIL(max), tCC = 10ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 4 Banks activated Added Notes @OPERATING AC PARAMETER Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns. REV. 0.0 July 1999 KMM366S1623DTL KMM366S1623DTL SDRAM DIMM PC66 Unbuffered DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S1623DTL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623DTL consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-...