DatasheetsPDF.com

IRG4PC50U Dataheets PDF



Part Number IRG4PC50U
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4PC50U DatasheetIRG4PC50U Datasheet (PDF)

PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for.

  IRG4PC50U   IRG4PC50U


Document
PD 91470F IRG4PC50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 55 27 220 220 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ---0.24 ---6 (0.21) Max. 0.64 ---40 ---- Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4PC50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage T 18 ---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- 1.65 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 2.0 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 gfe Forward Transconductance U 16 24 ------ICES Zero Gate Voltage Collector Current ---- ------- ---IGES Gate-to-Emitter Leakage Current ---- ---Max. Units Conditions ---V VGE = 0V, IC = 250µA ---V VGE = 0V, IC = 1.0A ---- V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 27A VGE = 15V ---IC = 55A See Fig.2, 5 V ---IC = 27A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE ≥ 15V, IC = 27A 250 µA VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 180 25 61 32 20 170 88 0.12 0.54 0.66 31 23 230 120 1.6 13 4000 250 52 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ------TJ = 25°C ns 260 IC = 27A, VCC = 480V 130 VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 10, 11, 13, 14 0.9 ---TJ = 150°C, ---IC = 27A, VCC = 480V ns ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50U 80 F o r b o th : T rian gu la r w a ve: 60 L oad C urre nt (A ) D u t y c yc le: 5 0% TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d r ive a s sp ec ified P o w e r D is sip atio n = 40 W C la m p vo lta g e : 8 0 % o f ra te d S q u are w a ve : 40 6 0 % o f ra ted vo ltag e 20 Idea l d io des 0 0.1 1 10 A 100 f, F re qu e nc y (k H z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 1000 100 I C , C ollec to r-to-Em itte r C u rre nt (A) 100 10 TJ = 1 5 0 ° C TJ = 1 5 0 ° C TJ = 2 5 ° C 1 10 TJ = 2 5 °C 0.1 0 1 VGE = 15V 2 0 µ s P U L S E W ID T H A 10 1 4 6 8 V C C = 10 V 5 µs P U L S E W IDTH A 10 12 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50U 60 50 V CE , C olle ctor-to-E m itte r V oltage (V) V .


IRG4PC50UD IRG4PC50U IRG4PC50S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)