Document
PD 91470F
IRG4PC50U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 55 27 220 220 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
---0.24 ---6 (0.21)
Max.
0.64 ---40 ----
Units
°C/W g (oz)
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IRG4PC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage T 18 ---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- 1.65 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 2.0 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 gfe Forward Transconductance U 16 24 ------ICES Zero Gate Voltage Collector Current ---- ------- ---IGES Gate-to-Emitter Leakage Current ---- ---Max. Units Conditions ---V VGE = 0V, IC = 250µA ---V VGE = 0V, IC = 1.0A ---- V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 27A VGE = 15V ---IC = 55A See Fig.2, 5 V ---IC = 27A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE ≥ 15V, IC = 27A 250 µA VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 180 25 61 32 20 170 88 0.12 0.54 0.66 31 23 230 120 1.6 13 4000 250 52 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ------TJ = 25°C ns 260 IC = 27A, VCC = 480V 130 VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 10, 11, 13, 14 0.9 ---TJ = 150°C, ---IC = 27A, VCC = 480V ns ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50U
80
F o r b o th :
T rian gu la r w a ve:
60
L oad C urre nt (A )
D u t y c yc le: 5 0% TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d r ive a s sp ec ified P o w e r D is sip atio n = 40 W
C la m p vo lta g e : 8 0 % o f ra te d
S q u are w a ve :
40
6 0 % o f ra ted vo ltag e
20
Idea l d io des
0 0.1 1 10
A
100
f, F re qu e nc y (k H z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
I C , C o lle ctor-to-E m itter Cu rre n t (A )
1000
1000
100
I C , C ollec to r-to-Em itte r C u rre nt (A)
100
10
TJ = 1 5 0 ° C
TJ = 1 5 0 ° C
TJ = 2 5 ° C
1
10
TJ = 2 5 °C
0.1 0 1
VGE = 15V 2 0 µ s P U L S E W ID T H
A
10
1 4 6 8
V C C = 10 V 5 µs P U L S E W IDTH A
10 12
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 2 - Typical Output Characteristics www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4PC50U
60
50
V CE , C olle ctor-to-E m itte r V oltage (V)
V .