N-CHANNEL MOSFET
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET
TYPE IRFP250
s s s s s
IRFP250
VDSS 200V
RDS(on) < 0.085Ω
I...
Description
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET
TYPE IRFP250
s s s s s
IRFP250
VDSS 200V
RDS(on) < 0.085Ω
ID 33 A
TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
s
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 33 20 132 180 1.44 5 –65 to 150 150
(1)ISD ≤33A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
Sep 2000
1/8
IRFP250
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resi...
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