2SJ613

Ordering number : ENN7296 2SJ613 P-Channel Silicon MOSFET 2SJ613 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2062A [2SJ613] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C Conditions Ratings --20 ± 10 --6 --24 1.5 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS= ± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--3A ID=--3A, VGS=-4V ID=--1.5A, VGS=-2.5V Ratings min --20 --1 ± 10 -0.4 4.6 6.6 53 72 69 98 --1.3 typ max Unit V µA µA V S mΩ mΩ Marking : JT Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-su...