K2141 Datasheet PDF | NEC





(PDF) K2141 Datasheet PDF

Part Number K2141
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacture NEC
Total Page 8 Pages
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Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK 2141 is N-channel Power MOS Field Effec t Transistor designed for high voltage switching applications. PACKAGE DIMENS IONS (in millimeters) FEATURES 10.0 0.3 • • • • φ3.2 ± 0.2 4 .5 ± 0.2 2.7 ± 0.2 Low On-state Resi stance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = 1150 pF TYP. 3 ± 0.1 1 2 3 4 0.2 High Avalanche Capability Rating s Isolated TO-220 (MP-45F) Package Dra in to Source Voltage Gate to Source Vol tage Drain Current (DC) Drain Current ( pulse) VDSS VGSS ID (DC) ID (pulse)* 600 ± 30 ± 6.0 ± 24 35 2.0 –55 to +150 150 6.0 12 V V A A W W °C °C A mJ 1 2 3 2.54 TYP. 0.7 ± 0.1 13.5 MIN . 0.65 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipat ion (Ta = 25 °C) PT2 Storage Temperatu re Channel Temperature Single Avalanche Current Single Avalanche Energy *PW ≤ 10 µs, Duty Cyc.

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K2141 datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2141
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
Low On-state Resistance
RDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3.0 A)
LOW Ciss Ciss = 1150 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±6.0
A
Drain Current (pulse)
ID (pulse)* ±24
A
Total Power Dissipation (TC = 25 °C) PT1
35 W
Total Power Dissipation (Ta = 25 °C) PT2
2.0 W
Storage Temperature
Tstg –55 to +150 °C
Channel Temperature
Tch 150 °C
Single Avalanche Current
IAS**
6.0
A
Single Avalanche Energy
EAS**
12
mJ
*PW 10 µs, Duty Cycle 1%
**Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
123
0.7 ± 0.1
2.54 TYP.
1.3 ± 0.2 0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
2.5 ± 0.1
123
1. Gate
2. Drain
3. Source
ISOLATED TO-220 (MP-45F)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Gate (G)
Body diode
Source (S)
Document No. TC-2514
(O.D. No. TC–8073)
Date Published January 1995 P
Printed in Japan
© 1995

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