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ST2310FX Dataheets PDF



Part Number ST2310FX
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet ST2310FX DatasheetST2310FX Datasheet (PDF)

® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONITORS 17" AND HIGH END TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst.

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® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONITORS 17" AND HIGH END TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T C = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 65 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 October 2003 ST2310FX THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.9 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA L = 25 mH 600 T J = 125 o C Min. Typ. Max. 1 2 1 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 7 A IC = 7 A IC = 1 A IC = 7 A IC = 7 A IC = 6 A I B(on) = 1 A L BB(off) = 1.3 µ H I B = 1.75 A I B = 1.75 A V CE = 5 V V CE = 1 V V CE = 5 V f h = 64 KHz V BE(off) = -2.5 V (see figure 1) 25 5.5 6.5 2.3 0.16 3 1.1 V V 9.5 3 0.35 µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 2/6 ST2310FX Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST2310FX Power Losses Switching Time Inductive Load Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 4/6 ST2310FX ISOWATT218FX MECHANICAL DATA DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R DIA mm TYP. inch TYP. MIN. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15.00 2.20 4.20 3.80 MIN. 0.209 0.110 0.122 0.071 0.031 0.026 0.071 0.406 0.602 0.386 0.898 1.035 1.701 0.169 0.957 0.575 0.071 0.150 0.134 MAX. 0.224 0.126 0.138 0.087 0.043 0.037 0.087 0.453 0.618 0.402 0.913 1.051 1.748 0.185 0.972 0.591 0.087 0.165 0.150 5.45 0.215 - Weight : 5.6 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 5/6 ST2310FX Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 .


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