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DS42515 Dataheets PDF



Part Number DS42515
Manufacturers AMD
Logo AMD
Description MCP Flash Memory and SRAM
Datasheet DS42515 DatasheetDS42515 Datasheet (PDF)

DS42515 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features s Power supply voltage of 2.7 to 3.3 volt s High performance — 85 ns maximum access time SOFTWARE FEATURES s Data Management Software (DMS) — AMD-supplied software manages data programming and erasing, enabling EEPROM emulat.

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DS42515 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features s Power supply voltage of 2.7 to 3.3 volt s High performance — 85 ns maximum access time SOFTWARE FEATURES s Data Management Software (DMS) — AMD-supplied software manages data programming and erasing, enabling EEPROM emulation — Eases sector erase limitations s Package — 69-Ball FBGA s Supports Common Flash Memory Interface (CFI) s Erase Suspend/Erase Resume — Suspends erase operations to allow programming in same bank s Operating Temperature — –25°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES s Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles s Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES s Any combination of sectors can be erased s Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion s Secured Silicon (SecSi) Sector: Extra 64 KByte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. — Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed s Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to reading array data s Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero s WP#/ACC input pin — Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status — Acceleration (ACC) function accelerates program timing s Bottom boot block s Manufactured on 0.23 µm process technology s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard s Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system PERFORMANCE CHARACTERISTICS s High performance — 85 ns access time — Program time: 7 µs/word typical utilizing Accelerate function SRAM Features s Power dissipation — Operating: 50 mA maximum — Standby: 7 µA maximum s Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode s Minimum 1 million write cycles guaranteed per sector s 20 Year data retention at 125°C — Reliable operation for the life of the system s s s s CE1#s and CE2s Chip Select Power down features using CE1#s and CE2s Data retention supply voltage: 1.5 to 3.3 volt Byte data control: LB#s (DQ0–DQ7), UB#s (DQ8–DQ15) This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 23784 Rev: B Amendment/1 Issue Date: March 15, 2001 Refer to AMD’s Website (www.amd.com) for the latest information. GENERAL DESCRIPTION Am29DL164 Features The Am29DL164 is a 16 megabit, 3.0 volt-only flash memory device, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. Word mode data appears on DQ0 – DQ15; byte mode data appears on DQ0 – DQ7. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 85 ns. The device is offered in a 69-ball FBGA package. Standard control pins—chip enable (CE#f), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This i s a n a dv a n ta ge c om pa r e d to s y s te ms wh e r e user-written .


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