MCP Flash Memory and SRAM
PRELIMINARY
DS42585
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL324D Bottom Boot 32 Megabit (4 M x 8-B...
Description
PRELIMINARY
DS42585
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
s Power supply voltage of 2.7 to 3.3 volt s High performance
— 85 ns maximum access time
SOFTWARE FEATURES
s Data Management Software (DMS)
— AMD-supplied software manages data programming and erasing, enabling EEPROM emulation — Eases sector erase limitations
s Package
— 73-Ball FBGA
s Supports Common Flash Memory Interface (CFI) s Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in same bank
s Operating Temperature
— –25°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
s Simultaneous Read/Write operations
— Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations
s Data# Polling and Toggle Bits
— Provides a software method of detecting the status of program or erase cycles
s Unlock Bypass Program command
— Reduces overall programming time when issuing multiple program command sequences
HARDWARE FEATURES
s Any combination of sectors can be erased s Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle completion
s Secured Silicon (SecSi) Sector: Extra 64 KByte sector
— Factory locked and identifiable: 16 bytes available for secure, ra...
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