MS1402
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi ...
MS1402
RF & MICROWAVE
TRANSISTORS
RF PRODUCTS DIVISION
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi . COM
The MS1402 is a 12.5 V Class C epitaxial silicon
NPN planar
transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
450 - 512 MHz !" 12.5 Volts !" Efficiency 55% !" POUT = 2.0 W Min. !" GP = 10.0 dB Gain !"
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
UHF Mobile !" Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value 36 16 36 4.0 0.75 5 +200 -65 to +150
Unit V V V V A W °C °C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
35
°C/W
MS1402
Copyright 2000 MSC1613.PDF 2000-11-06
Microsemi
RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
MS1402
RF & MICROWAVE
TRANSISTORS
RF PRODUCTS DIVISION
P RODUCT P REVIEW
W W W . Microsemi . COM
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
Symbol BVCES BVCEO BVEBO ICBO hFE IC = 5 mA IC = 25 mA IE = 1 mA VCB =15 V VCE = 5 V
Test Conditions VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 100 mA
Min. 36 16 4.0 20
MS1402...
