2SK3372

Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction Unit: mm For impedance conversion in low frequency For electret capacitor microphone I Features High mutual conductance gm Low noise voltage of NV 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05 –0.02 1 2 I Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 100 −20 to +80 −55 to +125 Unit V V mA mA mA mW °C °C 0 to 0.01 0.52±0.03 5˚ 1: Drain 2: Source 3: Gate SSSMini3-F1 Package Marking Symbol: 1H I Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain current Symbol ID *1 IDSS Mutual conductance Noise voltage Voltage gain gm NV GV1 GV2 GV3 ∆GV. f*2 Voltage gain difference Electrostatic discharge *3 GV2 − GV1 GV1 − GV3 ESD C = 200 pF, R = 0 Ω Conditions VDS = 2.0 V, RD = 2.2 kΩ ± 1% VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 VD = 2.0 V, VGS = 0, f = 1 kHz VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, A-Curve VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 12 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz 0 0 ±200 −7.5 −4.0 −8.0 −4.7 −1.5 −5.0 0 1.7 4.0 1.7 ...