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STD2NC45

ST Microelectronics

N-CHANNEL MOSFET

STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s...


ST Microelectronics

STD2NC45

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Description
STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s VDSS 450 V 450 V RDS(on) < 4.5 Ω < 4.5 Ω ID 1.5 A 0.5 A Pw 30 W 3.1 W 3 2 1 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK IPAK TO-92 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS s ORDERING INFORMATION SALES TYPE STD2NC45-1 STQ1NC45 STQ1NC45-AP MARKING D2NC45 Q1NC45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK June 2003 1/11 STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter STD2NC45-1 Value STQ1NC45 Unit V V V 0.5 0.315 2 3.1 0.025 A A A W W/°C V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C D...




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