STD2NB60
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE STD2NB60
s s s s s
V DSS 600 V
R DS(on) < 3.6 Ω
ID 2.6 A
TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an a...
