STD2HNK60Z-1

STD2HNK60Z, STD2HNK60Z-1 Datasheet N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH Power MOSFETs in DPAK and IPAK packages TAB 3 1 DPAK TAB 123 IPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS RDS(on) max. ID STD2HNK60Z 600 V 4.8 Ω 2A STD2HNK60Z-1 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD2HNK60Z STD2HNK60Z-1 Product summary Order code STD2HNK60Z Marking D2HNK60Z Package DPAK Packing Tape and reel Order code STD2HNK60Z-1 Marking D2HNK60Z Package IPAK Packing Tube DS3646 - Rev 7 - October 2021 For further information contact your local STMicroelectronics sales office. www.st.com STD2HNK60Z, STD2HNK60Z-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (R = 1.5 kΩ,...