®
STW60NE10
N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET™ POWER MOSFET
TYPE STW 60NE10
s s s s
V DSS 100 V
R DS(o...
®
STW60NE10
N - CHANNEL 100V - 0.016Ω - 60A TO-247 STripFET™ POWER MOSFET
TYPE STW 60NE10
s s s s
V DSS 100 V
R DS(on) <0.022 Ω
ID 60 A
TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
1 2 3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) Peak Diode Recovery voltage slope Ts tg Tj June 1999 Storage Temperature Max. Operating Junction Temperature
o o o
Value 100 100 ± 20 60 42 240 180 1.2 9 -65 to 175 175
( 1) ISD ≤60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
() Pulse width limited by safe operating a...