POWER FET. MTP6N60E Datasheet

MTP6N60E FET. Datasheet pdf. Equivalent


Motorola MTP6N60E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
G
®
D
S
Order this document
by MTP6N60E/D
MTP6N60E
Motorola Preferred Device
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHMS
CASE 221A–06, Style 5
TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
VDSS
VDGR
VGS
VGSM
600 Vdc
600 Vdc
± 20 Vdc
± 40 Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
ID 6.0 Adc
ID 4.6
IDM 18 Apk
PD 125 Watts
1.0 W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 10 mH, RG = 25 )
TJ, Tstg
EAS
– 55 to 150
405
°C
mJ
Thermal Resistance — Junction to Case°
— Junction to Ambient°
RθJC
RθJA
1.0 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1


MTP6N60E Datasheet
Recommendation MTP6N60E Datasheet
Part MTP6N60E
Description TMOS POWER FET
Feature MTP6N60E; MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™.
Manufacture Motorola
Datasheet
Download MTP6N60E Datasheet




Motorola MTP6N60E
MTP6N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
689
— Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
IGSS
µAdc
— — 1.0
— — 50
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0 3.0 4.0 Vdc
— 7.1 — mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
RDS(on)
VDS(on)
gFS
— 0.94 1.2 Ohms
Vdc
— 6.0 8.6
— — 7.6
2.0 5.5
— mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
1498
2100
pF
— 158 220
— 29 60
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
— 14 30
— 19 40
— 40 80
— 26 55
— 35.5 50
— 8.1 —
— 14.1 —
— 15.8 —
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
— 0.83 1.2
— 0.72 —
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
— 266 —
ns
— 166 —
— 100 —
— 2.5 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
LD nH
— 3.5 —
— 4.5 —
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
LS
— nH
— 7.5
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
2 Motorola TMOS Power MOSFET Transistor Device Data



Motorola MTP6N60E
TYPICAL ELECTRICAL CHARACTERISTICS
MTP6N60E
12
TJ = 25°C
10
8
VGS = 10 V
6V
7V
8V
12
VDS 10 V
10
8
6
5V
4
2
4V
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
6
4
2
100°C
25°C
TJ = – 55°C
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
TJ = 100°C
25°C
– 55°C
0
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.4
TJ = 25°C
1.3
1.2
1.1 VGS = 10 V
1.0
15 V
0.9
0.8
0 2 4 6 8 10 12
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 3 A
2
1.5
1
0.5
0
– 50 – 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 5. On–Resistance Variation with
Temperature
150
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
1
0 100 200 300 400 500 600
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3







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