MOS TRANSISTOR. MTP6N60 Datasheet

MTP6N60 TRANSISTOR. Datasheet pdf. Equivalent

MTP6N60 Datasheet
Recommendation MTP6N60 Datasheet
Part MTP6N60
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Feature MTP6N60; MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS 600 V R DS(.
Manufacture ST Microelectronics
Datasheet
Download MTP6N60 Datasheet




ST Microelectronics MTP6N60
MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
MTP6N60
VDSS
600 V
R DS( on)
< 1.2
ID
6.8 A
s TYPICAL RDS(on) = 1
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
Value
600
600
± 20
6.8
4.2
30
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /oC
oC
oC
1/9



ST Microelectronics MTP6N60
MTP6N60
THERMAL DATA
Rthj-case
Rthj- amb
Rthj- amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
6.8
460
21
4.2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
600
Typ.
Max.
Unit
V
25
250
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 3 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
3.1
1
Max.
4.5
1.2
Unit
V
6.8 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 3 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
2
Typ.
4.8
Max.
Unit
S
1150
160
75
1500
240
110
pF
pF
pF
2/9



ST Microelectronics MTP6N60
MTP6N60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 3 A
RG = 50
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 6 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 6 A VGS = 10 V
Min.
Typ.
50
140
240
78
8
41
Max.
65
175
98
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 6 A
RG = 50 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
100
27
145
Max.
125
34
180
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 6 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
3.8
24
Unit
A
A
750
13.5
38
2
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9







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