MP4009

MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching Industrial Applications Unit: mm Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = −5 A (max) High DC current gain: hFE = 1000 (min) (VCE = −3 V, IC = −3 A) Complementary to MP4003 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating −100 −100 −5 −5 −8 −0.1 2.0 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Array Configuration R1 R2 1 10 2 4 6 8 3 5 7 9 R1 ≈ 5 kΩ, R2 ≈ 120 Ω 1 2004-07-01 MP4009 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base b...