Power MOSFET
PD - 93919A
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR9N20D IRFU9N20D
HEXFET® Power MOSFET
l
VDSS...
Description
PD - 93919A
SMPS MOSFET
Applications High frequency DC-DC converters
IRFR9N20D IRFU9N20D
HEXFET® Power MOSFET
l
VDSS
200V
RDS(on) max
0.38Ω
ID
9.4A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D-Pak IRFR9N20D
I-Pak IRFU9N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
9.4 6.7 38 86 0.57 ± 30 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
Notes through are on page 10
www.irf.com
1
6/29/00
IRFR9N20D/IRFU9N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.38 Ω VGS = 10V, ID = 5...
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