IRFR9110, IRFU9110
Data Sheet July 1999 File Number
4001.3
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
These are adv...
IRFR9110, IRFU9110
Data Sheet July 1999 File Number
4001.3
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541.
Features
3.1A, 100V rDS(ON) = 1.200Ω Temperature Compensating PSPICE™ Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER IRFR9110 IRFU9110 PACKAGE TO-252AA TO-251AA BRAND IF9110 IF9110
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A.
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
JEDEC TO-252AA
GATE SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-77
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFR9110, IRFU9110
Absolute Maximum Ratings
TC = 25oC, Unless Otherwi...