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IRFS4610 Dataheets PDF



Part Number IRFS4610
Manufacturers IRF
Logo IRF
Description Power MOSFET
Datasheet IRFS4610 DatasheetIRFS4610 Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits G l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96906C IRFB4610 IRFS4610 IRFSL4610 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 11m: 14m: 73A G DS TO-220AB IRFB4610 G DS D2Pak IRFS46.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits G l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96906C IRFB4610 IRFS4610 IRFSL4610 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 11m: 14m: 73A G DS TO-220AB IRFB4610 G DS D2Pak IRFS4610 G DS TO-262 IRFSL4610 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage Peak Diode Recovery e TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d IAR Avalanche Current c EAR Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC Junction-to-Case j RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 j RθJA Junction-to-Ambient (PCB Mount) , D2Pak ij Max. 73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lbxin (1.1Nxm) 370 See Fig. 14, 15, 16a, 16b, Typ. ––– 0.50 ––– ––– Max. 0.77 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W www.irf.com 1 5/22/08 IRF/B/S/SL4610 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 100 ––– ––– V VGS = 0V, ID = 250μA ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mAc RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 mΩ VGS = 10V, ID = 44A f VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100μA IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V RG Gate Input Resistance ––– 1.5 ––– Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 73 ––– ––– Qg Total Gate Charge ––– 90 140 Qgs Gate-to-Source Charge ––– 20 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 36 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 87 ––– td(off) Turn-Off Delay Time ––– 53 ––– tf Fall Time ––– 70 ––– Ciss Input Capacitance ––– 3550 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 150 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 330 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 380 ––– S VDS = 50V, ID = 44A nC ID = 44A VDS = 80V VGS = 10V f ns VDD = 65V ID = 44A RG = 5.6Ω VGS = 10V f pF VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V h, See Fig.11 VGS = 0V, VDS = 0V to 80V g, See Fig. 5 Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) c VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time Min. Typ. Max. Units Conditions ––– ––– 73 A MOSFET symbol D ––– ––– 290 showing the integral reverse G S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 44A, VGS = 0V f ––– 35 53 ns TJ = 25°C VR = 85V, ––– 42 63 TJ = 125°C ––– 44 66 nC TJ = 25°C IF = 44A di/dt = 100A/μs f ––– 65 98 TJ = 125°C ––– 2.1 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.39mH RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 44A, di/dt ≤ 660A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400μs; duty cycle ≤ 2%. … Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at TJ approximately 9.


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