IRFS3507

PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 75V 7.0m: 8.8m: 97A G DS TO-220AB IRFB3507 G DS D2Pak IRFS3507 G DS TO-262 IRFSL3507 Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g Max. 97c 69c 390 190 1.3 ± 20 5.0 -55 to + 175 300 10lbxin (1.1Nxm) 280 See Fig. 14, 15, 16a, 16b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk 2 Typ. ––– 0.50 ––– ––– Max. 0.77 ––– 62 40 Units °C/W www.irf.com ...