PD- 93797
SMPS MOSFET
IRFS11N50A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptabl...
PD- 93797
SMPS MOSFET
IRFS11N50A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
l
VDSS
500V
Rds(on) max
0.52Ω
ID
11A
Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001)
D 2 P ak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies:
l l l
Two
Transistor Forward Half & Full Bridge Power Factor Correction Boost
through are on page 8
Notes
www.irf.com
1
9/13/99
IRFS11N5OA
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 500 ––– ––– 2.0 ––– ––– ––– –––
Typ. ––– 0.060 ––– ...