Document
PD - 93890
SMPS MOSFET
IRFB59N10D IRFS59N10D IRFSL59N10D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
100V
RDS(on) max
0.025Ω
ID
59A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current
D2Pak IRFS59N10D
TO-262 IRFSL59N10D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
59 42 236 3.8 200 1.3 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l l
Half-bridge and Full-bridge DC-DC Converters Full-bridge Inverters
Notes
through are on page 11
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1
4/17/00
IRFB/IRFS/IRFSL59N10D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.025 Ω VGS = 10V, ID = 35.4A 5.5 V VDS = VGS, ID = 250µA 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 76 24 36 16 90 20 12 2450 740 190 3370 390 690 Max. Units Conditions ––– S VDS = 50V, ID = 35.4A 114 I D = 35.4A 36 nC VDS = 80V 54 VGS = 10V, ––– VDD = 50V ––– ID = 35.4A ns ––– RG = 2.5Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
510 35.4 20
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
––– 0.50 ––– –––
Max.
0.75 ––– 62 40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 59 ––– ––– showing the A G integral reverse ––– ––– 236 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V ––– 130 200 ns TJ = 25°C, IF = 35.4A ––– 0.75 1.1 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFS/IRFSL59N10D
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
5.0V
1
0.1
5.0V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.01 0.1
0.1 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 59A
I D , Drain-to-Source Current (A)
2.0
100
TJ = 175 ° C
1.5
10
1.0
1
TJ = 25 ° C
V DS = 50V 20µs PULSE WIDTH 4 6 8 10 12 14
0.5
0.1
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB/IRFS/IRFSL59N10D
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + C gd
20
ID = 35.4A
VGS, Gate-to-Source Voltage (V)
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance(pF)
10000
12
Ciss
1000
8
Coss
4
Crss
100 1 10 100
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Vo.