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IRFS59N10D Dataheets PDF



Part Number IRFS59N10D
Manufacturers IRF
Logo IRF
Description Power MOSFET
Datasheet IRFS59N10D DatasheetIRFS59N10D Datasheet (PDF)

PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ T.

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PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) max 0.025Ω ID 59A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB59N10D and Current D2Pak IRFS59N10D TO-262 IRFSL59N10D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 59 42 236 3.8 200 1.3 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l l Half-bridge and Full-bridge DC-DC Converters Full-bridge Inverters Notes  through ‡ are on page 11 www.irf.com 1 4/17/00 IRFB/IRFS/IRFSL59N10D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.11 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.025 Ω VGS = 10V, ID = 35.4A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 76 24 36 16 90 20 12 2450 740 190 3370 390 690 Max. Units Conditions ––– S VDS = 50V, ID = 35.4A 114 I D = 35.4A 36 nC VDS = 80V 54 VGS = 10V, „ ––– VDD = 50V ––– ID = 35.4A ns ––– RG = 2.5Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 80V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 510 35.4 20 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– ––– Max. 0.75 ––– 62 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 59 ––– ––– showing the A G integral reverse ––– ––– 236 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V „ ––– 130 200 ns TJ = 25°C, IF = 35.4A ––– 0.75 1.1 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/IRFSL59N10D 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 10 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 5.0V 1 0.1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.01 0.1 0.1 0.1 20µs PULSE WIDTH TJ = 175 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 59A I D , Drain-to-Source Current (A) 2.0 100 TJ = 175 ° C 1.5 10 1.0 1 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 4 6 8 10 12 14 0.5 0.1 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB/IRFS/IRFSL59N10D 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + C gd 20 ID = 35.4A VGS, Gate-to-Source Voltage (V) 16 VDS = 80V VDS = 50V VDS = 20V C, Capacitance(pF) 10000 12 Ciss 1000 8 Coss 4 Crss 100 1 10 100 0 0 20 40 60 FOR TEST CIRCUIT SEE FIGURE 13 80 100 120 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Vo.


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