Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω(Typ.)
1
Ο
IRFS530A
BVDSS = 100 V RDS(on) = 0.11 Ω ID = 10.7 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 10.7 7.6
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C )
Ο
56 + _ 20 229 10.7 3.2 6.5 32 0.21 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο
C
300
Thermal Resistance
Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 4.69 62.5 Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFS530A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Thres...
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