Power MOSFET
PD - 94357A
SMPS MOSFET
IRFB52N15D IRFS52N15D IRFSL52N15D
HEXFET® Power MOSFET
Applications l High frequency DC-DC co...
Description
PD - 94357A
SMPS MOSFET
IRFB52N15D IRFS52N15D IRFSL52N15D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.032Ω
ID
60A
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
TO-220AB IRFB52N15D
D2Pak
TO-262
IRFS52N15D IRFSL52N15D
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Notes through are on page 11
www.irf.com
Max. 60 43 240 3.8 320 2.1 ± 30 5.5
-55 to + 175
300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A
W
W/°C V
V/ns
°C
Typ. ––– 0.50 ––– –––
Max. 0.47 ––– 62 40
Units °C/W
1
06/25/02
IRFB/IRFS/IRFSL52N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Stat...
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