IRFS52N15D

PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB52N15D D2Pak TO-262 IRFS52N15D IRFSL52N15D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Notes  through ‡ are on page 11 www.irf.com Max. 60 43 240 3.8 320 2.1 ± 30 5.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typ. ––– 0.50 ––– ––– Max. 0.47 ––– 62 40 Units °C/W 1 06/25/02 IRFB/IRFS/IRFSL52N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Stat...