IRFS520A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο IRFS520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 7.2 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 100 7.2 5.1 37 + _ 20 104 7.2 2.8 6.5 28 0.19 - 55 to +175 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W/ C Ο Ο C 300 Thermal Resistance Symbol R θ JC R θ JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.4 62.5 Ο Units C /W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS520A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage TJBreakdown Voltage Temp. Coeff. Gate Threshol...