IRFSL9N60A

PD - 91814A SMPS MOSFET IRFSL9N60A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. l VDSS 600V Rds(on) max 0.75Ω ID 9.2A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings l G DS T O -26 2 Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.2 5.8 37 170 1.3 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l Active Clamped Forward Main Switch Notes  through … are on page 8 www.irf.com 1 12/23/98 IRFSL9N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 600 ––– ––– V V GS = 0V, ID = 250µA ––– ––– 0.75 Ω VGS = 10V, ID = 5.5A „ 2.0 ––– 4.0 V VDS = VGS...