IRFSL4710

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 0.014Ω ID 75A TO-220AB IRFB4710 D2Pak IRFS4710 TO-262 IRFSL4710 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 75 53 300 3.8 200 1.4 ± 20 8.2 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Notes  through ‡ Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ are on page 11 Typ. ––– 0.50 ––– ––– Max. 0.74 ––– 62 40 Units °C/W www.irf.com 1 3/16/01 IRFB/IRFS/IRFL4710 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th...