Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits
G
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
PD - 96906C
IRFB4610 IRFS4610 IRFSL4610
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
S ID
100V 11m:
14m: 73A
G DS
TO-220AB IRFB4610
G DS
D2Pak IRFS4610
G DS
TO-262 IRFSL4610
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation
Linear Derating Factor
VGS dV/dt
Gate-to-Source Voltage Peak Diode Recovery e
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy d
IAR
Avalanche Current c
EAR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case j
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA
Junction-to-Ambient, TO-220 j
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max. 73 52 290 190 1.3 ± 20 7.6
-55 to + 175
300
10lbxin (1.1Nxm)
370 See Fig. 14, 15, 16a, 16b,
Typ. ––– 0.50 ––– –––
Max. 0.77 ––– 62 40
Units A
W W/°C
V V/ns °C
mJ A mJ...
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