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IRHM7360 Dataheets PDF



Part Number IRHM7360
Manufacturers IRF
Logo IRF
Description REPETITIVE AVALANCHE AND dv/dt RATED
Datasheet IRHM7360 DatasheetIRHM7360 Datasheet (PDF)

PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 400Volt, 0.22Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate.

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PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 400Volt, 0.22Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. ® IRHM7360 IRHM8360 N CHANNEL MEGA RAD HARD Product Summary Part Number IRHM7360 IRHM8360 BVDSS 400V 400V RDS(on) 0.22Ω 0.22Ω ID 22A 22A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ‚ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ƒ Avalanche Current ‚ Repetitive Avalanche Energy‚ Peak Diode Recovery dv/dt „ Operating Junction Storage Temperature Range Lead Temperature Weight 22 14 88 250 2.0 ±20 500 22 25 4.0 -55 to 150 Pre-Irradiation IRHM7230, IRHM8230 Units A W W/°C V mJ A mJ V/ns o C g 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (typical) www.irf.com 1 10/28/98 IRHM7360, IRHM8360 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 400 — — — 2.0 6.0 — — — — — — — — — — — — — Typ Max Units — 0.45 — — — — — — — — — — — — — — — 8.7 8.7 — — 0.22 0.25 4.0 — 50 250 100 -100 210 45 120 33 59 140 75 — — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 14A … VGS = 12V, ID = 22A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 14A … VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID =22A VDS = Max Rating x 0.5 VDD = 200V, ID = 22A, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance nA nC ns nH Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5600 990 380 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics  Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ‚ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 22 88 1.8 1000 11 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 22A, VGS = 0V … Tj = 25°C, IF =22A, di/dt ≤ 100A/µs VDD ≤ 50V … A V ns µC Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 0.5 — 48 °C/W Test Conditions Typical socket mount 2 www.irf.com Radiation Characteristics Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardn.


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