IRHM7150

PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.065Ω 0.065Ω 0.065Ω 0.065Ω REF: MIL-PRF-19500/603 ® RAD Hard ™ HEXFET TECHNOLOGY IRHM7150 JANSR2N7268 100V, N-CHANNEL ID 34A 34A 34A 34A QPL Part Number JANSR2N7268 JANSF2N7268 JANSG2N7268 JANSH2N7268 TO-254AA International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® technol- Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Po...