NTMS10P02R2

NTMS10P02R2 Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode Single SO−8 Package Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SO−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SO−8 Mounting Information Provided http://onsemi.com −10 AMPERES −20 VOLTS 14 mW @ VGS = −4.5 V P−Channel D Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 3.) Thermal Resistance − Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 3.) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 Ω) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS RθJA PD ID ID PD ID IDM RθJA PD ID ID PD ID IDM TJ, Tstg EAS ...