CY9C62256

PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features 100% form, fit, function-compatible with 32K × 8 micropower SRAM (CY62256) — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby — Easy memory expansion with CE and OE features — TTL-compatible inputs and outputs — Automatic power-down when deselected Replaces 32K × 8 Battery Backed (BB)SRAM, SRAM, EEPROM, FeRAM or Flash memory Data is automatically Write protected during power loss Write Cycles Endurance: > 1015 cycles Data Retention: > 10 Years Shielded from external magnetic fields Extra 64 Bytes for device identification and tracking Temperature ranges — Commercial: 0°C to 70°C — Industrial: – 40°C to 85°C JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC, and 28-pin TSOP-1 packages. Also available in 450-mil wide (300-mil body width) 28-pin narrow SOIC. Functional Description The CY9C62256 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a fast read and write RAM. It provides data retention for more than ten years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast writes and high write cycle endurance makes it superior to other types of nonvolatile memory. The CY9C62256 operates very similarly to SRAM devices. Memory read ...