STP60N05-14

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS 50 V 60 V R DS(on) < 0.014 Ω < 0.014 Ω ID 60 A 60 A s s s s s s s s s TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE VERY LOW RDS (on) APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Parameter Drain-Source Voltage (V gs = 0) Drain-Gate Voltage (R gs = 20 K Ω ) Gate-Source Voltage Drain-Current (continuous) at T c = 25 o C Drain-Current (continuous) at T c = 100 C Drain-Current (Pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max Operating Junction Temperature o o Value STP60N05-14 50 50 ± 20 60 50 240 150 1 -65 to 175 175 STP60N06-14 60 60 Unit V V V A A A W/ o C o C C C V o o ()Pulse width limited by safe operating area March 1996 1/5 STP60N05-14/STP60N06-14 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead...