CY7C1373C

CY7C1371C CY7C1373C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture Features No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock Pin compatible and functionally equivalent to ZBT™ devices Internally self-timed output buffer control to eliminate the need to use OE Registered inputs for flow-through operation Byte Write capability 3.3V/2.5V I/O power supply Fast clock-to-output times — 6.5 ns (for 133-MHz device) — 7.5 ns (for 117-MHz device) — 8.5 ns (for 100-MHz device) Clock Enable (CEN) pin to enable clock and suspend operation Synchronous self-timed writes Asynchronous Output Enable Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and 165-Ball fBGA packages Three chip enables for simple depth expansion Automatic Power-down feature available using ZZ mode or CE deselect JTAG boundary scan for BGA and fBGA packages Burst Capability—linear or interleaved burst order Low standby power Functional Description[1] The CY7C1371C/CY7C1373C is a 3.3V, 512K x 36/ 1M x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1371C/ CY7C1373C is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on e...